IndiumV3, Main, Repository, bibRecord, 000C55

Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors

Identifieur interne : 000C55 ( Main/Repository ); précédent : 000C54; suivant : 000C56

Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors

Auteurs : RBID : Pascal:13-0289706

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanoélectronique, Nanofil, Nanomatériau, Transistor effet champ, Traitement thermique, Champ intense, Nanostructure, Effet Seebeck, Electrode commande, Conductivité électrique, Donnée expérimentale, Tellurure de gallium, Mobilité électron, InAs, 8535, 8107V, 8107B, 8530T.

English descriptors

KwdEn :
- Electrical conductivity, Electron mobility, Experimental data, Field effect transistor, Gallium tellurides, Gates, Heat treatment, High field, III-V compound, III-V semiconductors, Indium arsenides, Nanoelectronics, Nanostructure, Nanostructured materials, Nanowires, Seebeck effect.

Abstract

Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias AT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

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Pascal:13-0289706

Le document en format XML

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<term>Gates</term>
<term>Heat treatment</term>
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<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
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<term>Composé III-V</term>
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<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Transistor effet champ</term>
<term>Traitement thermique</term>
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<term>Nanostructure</term>
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<term>Electrode commande</term>
<term>Conductivité électrique</term>
<term>Donnée expérimentale</term>
<term>Tellurure de gallium</term>
<term>Mobilité électron</term>
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<front><div type="abstract" xml:lang="en">Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias AT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.</div>
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<fC01 i1="01" l="ENG"><s0>Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias AT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.</s0>
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<s5>01</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s2>NK</s2>
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<s5>29</s5>
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<s4>INC</s4>
<s5>46</s5>
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<fC03 i1="18" i2="X" l="FRE"><s0>8535</s0>
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<s4>INC</s4>
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<fN44 i1="01"><s1>OTO</s1>
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Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors

Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors

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Abstract

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